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Pulsed operation of distributed feedback lasers has been demonstrated in the (Al,Ga,In)N material system using epitaxial lateral overgrowth. The devices were formed by overgrowing a third-order silicon nitride grating located beneath the active region. A narrow spectral linewidth of 0.1 nm was observed above threshold with an emission wavelength of 413.5 nm.
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Abare et al. (1999) studied this question.
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