Photoluminescence Behavior of Manganese‐Doped Zinc Silicate Phosphors

The purpose of the present study is to develop an understanding of the photoluminescence properties of Mn 2+ ‐doped zinc silicate (Zn 2 SiO 4 :Mn) phosphors, which have served as a gree‐emitting phosphor in many industrial applications. Thus, several experimental techniques, such as time‐resolved emission spectra, decay curves, and time‐resolved photoluminescence excitation spectra, have been conducted on Zn 2 SiO 4 :Mn phosphors. The characterization has been performed in terms of dopant concentration. The decay curves, together with the characteristic decay time, in particular, are measured as a function of excitation‐light wavelength, in the range of 200–520 nm. The decay behavior is strongly dependent on the excitation‐light wavelength. The excitation range is categorized into three regimes: the manganese direct excitation range, below the absorption‐edge ( E T ) energy level; the manganese ionization range, from E T to the optical band‐gap energy ( E g ) of Zn 2 SiO 4 ; and the intergap transition range, above the E g energy level.