Wide-band millimeter wave characterization of sub-0.2 micrometer gate-length AlInAs/GaInAs HEMTs

The S-parameters of an AlInAs/GaInAs high electron mobility transistor (HEMT) were measured using a picosecond optoelectronic system over a bandwidth of 100 GHz. These picosecond optoelectronic measurements were validated by comparing low-frequency measurements to those obtained using an on-wafer RF probes/vector network analyzer, and W-band results to measurements conducted using a waveguide-to-microstrip transition/vector network analyzer frequency extender. This is the widest bandwidth of measured S-parameters reported on a single transistor.>