Ultrafast scattering processes of hot electrons in InSb studied by time- and angle-resolved photoemission spectroscopy

Ultrafast scattering of highly energetic carriers in semiconductors is of great interest to both basic research and technological development. Using the technique of two-photon photoemission, instead of the more common ultrafast optical spectroscopy, in this study provides the ability to probe the conduction-band electron distributions in energy, momentum, and time on femtosecond to picosecond time scales. Deeper insight is obtained into the physics underlying hot-electron relaxation in InSb, a model system for semiconductors with a narrow band gap.