The near-band-edge (NBE) photoluminescence (PL) of AlGaN layers with different Al content was analyzed in a wide range of excitation intensities and temperatures. The PL peculiarities indicated that tails of density of states are formed in AlGaN alloys due to the fluctuation of the alloy composition. The model involving recombination through one type of nonradiative center is proposed. The dependence of NBE PL integrated intensity on excitation power for AlGaN is weaker than that for GaN, which is attributed to carrier localization in alloys with compositional fluctuations and, thus, reduction of probability of nonradiative recombination.
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Kuokštis et al. (2006) studied this question.
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