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The effect of free-carrier screening on the kinetics of evolution of relaxation processes in non- equilibrium photoexcited plasma in polar semiconductors is investigated. We compare numerical results obtained for GaAs under three different assumptions: neglecting screening effects, using a screening factor in the Debye-H\"uckel approximation, and introducing screening effects by means of a dielectric function calculated in the random-phase approximation.
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A. C. S. Algarte (1985) studied this question.
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