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August 15, 1980Physical review. B, Condensed matter

Intra- and inter-valence-band electronic Raman scattering in heavily doped p -GaAs

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Authors

DOD. J. OlegoPhilips (United States)
M. Cardona
M. CardonaAirbus (Italy)URU. RößlerLeibniz Institute for Solid State and Materials Research

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Olego et al. (1980) studied this question.

synapsesocial.com/papers/6a893c73a4df84145ecaf903https://doi.org/10.1103/physrevb.22.1905
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Also Consider

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  1. 1Light Scattering in Solids1972 · 558 citations
  2. 2Electron Effective Masses of InAs and GaAs as a Function of Temperature and Doping1961 · 213 citations