Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets

Direction and strength of piezoelectric built-in fields of GaInN quantum wells have been experimentally determined. The quantum wells have been grown either on the conventional {0001} crystal plane of GaN or on {11¯01} facets of selectively grown GaN stripes. The emission peak position of the electric-field-dependent photoluminescence can be modeled and yields value and sign of the piezoelectric field dependent on the strain of the quantum wells. On the semipolar {11¯01} facets, the quantum wells show a much weaker field (−0.1MV∕cm) compared to quantum wells grown on polar {0001} planes (−1.9MV∕cm), consistent with theoretic predictions.