We fabricated InAlGaN quaternary ultraviolet (UV)-light-emitting diodes (LEDs) on GaN substrates with a low dislocation density and on GaN templates consisting of n-GaN on sapphire substrates, and compared the characteristics of these LEDs. A UV LED on a GaN substrate showed a considerably higher output power than that on a GaN template and no saturation even at an injection current of 500 mA. Cathodeluminescence images indicated the advantages of using GaN substrates in InAlGaN UV LEDs.
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Akita et al. (2004) studied this question.
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