The effect of the last quantum barrier (LQB) on the internal quantum efficiency of GaN-light emitting diode (LED) was systematically investigated using a dual-wavelength GaN-LED design. Compared with a conventional GaN-LQB, a high indium contained In0.03Ga0.97N-LQB efficiently reduced the unintentional Mg impurity in the last quantum well and improved its photoluminescence and electroluminescence intensity up to 72% and 15%, respectively.
No takes yet. Share an insight, caveat, or question.
Park et al. (2008) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: