Answers are grounded in this paper and cite their sources.
The concept of interband tunnel junctions for wurtzite III-Nitride semiconductors based on polarization charges at heterointerfaces is introduced. Such polarization-charge tunnel junctions obviate the need for high n-type and p-type doping, which is a general requirement for conventional tunnel junctions and also is a significant challenge for large-band-gap III-nitride semiconductors. Transmission coefficients and current-voltage characteristics for GaN/AlN/GaN and AlN/GaN/AlN polarization-charge tunnel junctions are calculated using the k·p quantum-transmitting boundary method with an eight-band Hamiltonian with Burt-Foreman operator ordering. It is shown that polarization-charge tunnel junctions carry sufficient current to become viable components in future light-emitting devices.
No takes yet. Share an insight, caveat, or question.
M. Schubert (2010) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: