Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells

We report a large change in the photoluminescence (PL) properties induced by piezoelectric effects found in 10-nm-thick InGaN quantum wells. The time-resolved PL properties are measured with changing excitation intensity at 17 K. A blueshift in the PL peak of 200 meV and a decrease in the PL decay time from 3 μs to 17 ns are found with increasing excitation intensity. This large change is caused by a strong internal electric field up to 1 MV/cm and a spatial separation between an electron and a hole of as much as three times the Bohr radius.