Polarization-induced doping in AlInN/GaN nanowire ultraviolet light-emitting diodes

We present our study on AlInN-based ultraviolet (UV) core-shell nanowire light-emitting diodes (LEDs) utilizing a polarization-induced doping technique. Due to the formation of a core-shell structure, the non-radiative recombination on the nanowire surface is significantly reduced. Moreover, we have successfully fabricated AlInN/GaN-based core-shell nanowire UV LED employing polarization-engineered quantum barriers instead of conventional structures. The LED device exhibits significantly improved carrier concentration in the active region and decreased electron leakage due to the gradually raised effective conduction band barrier heights. At room temperature, the AlInN LEDs exhibit strong and stable emission at 296 nm. We provide a promising approach to fabricating high-performance light emitters.