InP-based 1.5 µm vertical cavity surface emittinglaser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors

Room temperature pulsed operation of a novel 1.5 µm vertical cavity surface emitting laser is reported. A GaAs/Al0.95Ga0.05As heterostructure is grown directly on the patterned InGaAsP/InP quantum well active region. Selective lateral oxidation of a lattice matched In0.52Al0.48As layer is used for current confinement and, to create the top AlxOy/GaAs distributed Bragg reflector. The minimum threshold current is 12 mA.