Demonstration of quantized conductance in deeply reactive ion etched In0.53Ga0.47As/InP electron waveguides with in-plane gates

Clear conductance quantization at T=4.2 K has been demonstrated in a 140 nm wide and 200 nm long trench-isolated In0.53Ga0.47As/InP electron waveguide with in-plane gates, using the surrounding two-dimensional electron gas as the gate. It was fabricated using metalorganic vapor phase epitaxy, electron beam lithography, and CH4/H2 reactive ion etching. In a T=20 K measurement on a 60 nm wide and 100 nm long device, only the first conductance plateau of 2e2/h was reached.