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The fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full Td symmetry and hence support the isolated-arsenic-antisite model of EL2. Measurements of both the shift due to the hydrostatic component of the stress as well as the g factor of the final state of the transition confirm the identification of this photoluminescence with EL2.
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Nissen et al. (1991) studied this question.
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