The free carrier concentration at oval defects in silicon-doped GaAs grown by molecular beam epitaxy has been studied on the basis of longitudinal-optical (LO)-phonon plasmon coupled mode frequency through Raman spectroscopy. The carrier concentration at the oval defects was found to be lower as compared to the defect-free regions. The variations of surface depletion width with the concentration calculated from LO phonon intensities was also used to obtain the carrier concentration at the oval defects. Excellent agreement was found between the carrier concentrations obtained from these two methods.
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Dobal et al. (1995) studied this question.
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