Highly reliable blue‐violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layer

We describe highly reliable operation of a novel planar inner stripe blue‐violet laser diode (BV‐LD). A planar regrowth technique makes it possible to simultaneously fabricate a low‐resistive superlattice (SL) structure both on the current‐injecting narrow stripe area and on the AlN current‐blocking layer. This allows for low operating voltage and over 1000 h stable operation at a single‐mode output power of 200 mW at 80 °C. The results obtained here clearly indicate that this inner stripe laser structure is a desirable candidate for a reliable high‐power light source for the next generation of optical disc systems. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)