In an AlGaN quantum-well laser, the presence of Al affects the optical properties of the gain-generating active region partly because of the distinct difference in the band structure between AlN and GaN or InN. The intricate connection between band structure and internal-electric-field effects leads to a noticeably stronger influence of barrier composition on optical gain, lasing polarization, and threshold current than in conventional near-infrared III-V lasers.
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Chow et al. (2007) studied this question.
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