Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells

An ultraviolet light emitting diode with quaternary AlInGaN/AlInGaN multiple quantum wells and peak emission wavelength at 305 nanometers (nm) is reported for the first time. The peak emission wavelength can be tuned from 305 nm to 340 nm by varying the alloy compositions of the quaternary AlInGaN active layers using a pulse atomic layer epitaxy process. At 340 nm, for a 20 µm×1000 µm stripe geometry device an output power as high as 1 mW was measured from the sapphire substrate side.