The spatial distributions of cathodoluminescence (CL) in a triple quantum well (TQW) of ZnCdSe/ZnSe grown by metalorganic vapor phase epitaxy (MOVPE) method on GaAs(001) have been examined using a low-temperature CL measurement system combined with a transmission electron microscope (TEM). The CL intensity distribution appearing in the CL images of cross-sectional samples of the TQW can be attributed to the well thickness fluctuation in each QW layer and to competition among channels of recombination such as radiative recombination due to impurities and non-radiative recombination at defects. Moreover, plan-view CL images of the TQW samples show the distribution of the misfit dislocations at the interfaces of each QW layer individually, and reveal the thickness fluctuation in the individual QW layers.
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Mitsui et al. (1997) studied this question.
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