Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection

InGaN multiquantum-well (MQW) hexagonal microfacet (HMF) lasers have been fabricated by electron cyclotron resonance dry etching of as-grown planar InGaN MQW laser structures followed by metalorganic vapor phase epitaxy regrowth of p-GaN to form mirror facets of the lasers. The mirror facets are smooth and vertical {112̄0} facets of the regrown p-GaN. The HMF lasers lase at 401 nm under pulsed operation at room temperature. There is no significant difference in threshold current density for different cavity lengths of 480 and 770 μm, indicating that the mirror facets act as total reflectors.