In this work, the low-frequency noise (LFN) characteristics of reconfigurable field-effect-transistor (RFET), gated Schottky Diode (GSD), are investigated. The GSD has a different 1/fnoise origin depending on the operation mode (p- orn-type FET mode) and current (I O) region (low or highI Oregion). Depending on the 1/fnoise origin, the effects of the program/erase (P/E) cycling differs. Then-type mode GSD operating in the highI Oregion whose 1/fnoise is originated from the carrier number fluctuation (CNF) shows the largest noise increase after the 104P/E cycling.
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Shin et al. (2021) studied this question.
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