Electronic and lattice contributions to the specific heat are reported for several n-type degenerate Ge ignots. The electronic effective mass, calculated on the assumption of a parabolic conduction band, is not strongly dependent on donor concentration in Ge. The Debye temperature decreases as donor or acceptor impurities are added, from 371^∘{}K for pure Ge to 362^∘{}K for the most heavily doped ingot. However, this marked decrease did not occur in silicon-doped Ge. It is suggested that the effect is due to screening of long-range lattice forces by free electrons or holes.
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Bryant et al. (1961) studied this question.