Direct measurements of the intrinsic surface-recombination velocity (SRV) on p-type InP have been performed using ultrafast time-resolved photoluminescence. The results show that the intrinsic SRV on p-type InP is low ({~}500 cm/s), similar to the value reported for n-type InP surfaces. It is suggested that the low luminescence efficiency of p-type InP is due to its low effective bulk lifetime (23 ns) and to a large surface band bending, and does not indicate high SRV as has been generally accepted.
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Rosenwaks et al. (1991) studied this question.
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