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We present the results of investigations of planar domain patterns (isolated domains and domain gratings) fabricated by irradiation of the nonpolar Y-surface of LiNbO3 crystals by an electron beam (EB) incident normally onto the surface. The EB recorded domains were investigated using atomic force microscopy, confocal second harmonic generation microscopy, and chemical etching as an auxiliary method. The dependence of the domain characteristics on irradiation conditions (acceleration voltage U, EB current I, and irradiation time tirr) were determined. The length Ld of both isolated domains and domain gratings along the polar axis Z grows linearly with tirr (at U, I = const) with no tending to saturation. The plots Ld(tirr) obtained for U = 10 and 15 kV are practically identical, whereas the values of Ld for U = 5 kV are essentially lower. The domain thickness Td along the Y-direction, i.e., the depth of the switched layer grows with acceleration voltage U. These results are discussed in terms of space-charge fields formation arising under EB irradiation of insulators. The linearity of Ld(tirr) is accounted for by the frontal domain growth via the viscous friction law. The experimental dependence of Td on U supports the suggestion that the domain thickness is determined by the penetration depth Re of primary electrons, which in turn is governed by U. The difference in Ld(tirr) plots for different U is accounted for by different electron emission σ. Indirect evidences of a defect structure modification in a thin surface layer with respect to the crystal bulk are obtained.
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Kokhanchik et al. (2015) studied this question.
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