Magnetoelectric Switching Energy of Antiferromagnetic Cr2O3 Used for Spintronic Logic Devices and Memory

Magnetoelectric (ME) switching energy is the most important aspect in the practical application of antiferromagnetic (AFM) Cr2O3‐based perpendicular exchange‐coupling heterostructures, but it is not fully understood. This study firstly clarifies the relation between the applied magnetic/electric field and surface spin directions (domain status) as well as the perpendicular exchange bias sign in this system. Secondly, the asymmetric ME switching behavior for both Cr2O3 and its perpendicular exchange‐coupling heterostructures is discussed. Finally, a model is developed to examine the energy required during the ME switching of the above system. It was found that the surface status and microstructure of Cr2O3 are essential factors influencing the system's ME switching energy. This work contributes to realizing low‐energy information writing for AFM Cr2O3 used in spintronic logic devices and memory.