Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon

Praseodymium oxide (Pr2O3) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance–voltage and current–voltage measurements on metal-oxide-semiconductor capacitors of several areas. The Pr2O3 films have shown a dielectric constant ε=23–25 and a leakage current density of 8.8×10−8 A/cm2 at +1 V.