PrOx thin films have been grown epitaxially on r-plane sapphire by pulsed laser deposition. The films have (100) orientation if grown at 800 °C, and twinned (111) at lower substrate temperatures. The lattice constant of the PrOx film can be varied by thermal treatment at different oxygen partial pressures. a axis-oriented YBa2Cu3O7−δ films have been grown epitaxially on (100) Pr6O11 layers.
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Ling et al. (1992) studied this question.
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