Rare-earth oxides Nd2O3, Er2O3, Sm2O3, Pr6O11, and Yb3O2 are found to be suitable for use as the gate insulator in TFTs. Even a 1:1 ratio, by weight, mixed Pr6O11 and Yb2O3 is found to yield good results in CdS and CdSe TFTs. The TFTs having “mixed semiconductor” obtained by mixing CdS and CdSe in the ratio of 1:1 by weight, and the rare-earth oxides as the semiconductor-insulator (S-I) combination also exhibit well saturated characteristics from which transconductance, output resistance, amplification factor, and gain-bandwidth product are calculated.
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Singh et al. (1987) studied this question.
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