InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates

High-quality InGaN-based visible light-emitting diodes (LEDs) are demonstrated on ScAlMgO 4 (SCAM) (0001) substrates. GaN grown on SCAM by metal–organic vapor phase epitaxy is nearly strain-free with an in-plane compressive strain of −1.26 × 10 −3 , which is much smaller than that in conventional GaN/sapphire owing to the smaller thermal expansion mismatch between GaN and SCAM. We fabricate InGaN/GaN quantum well LEDs on GaN/SCAM templates, and observe bright blue electroluminescence at ∼470 nm wavelength. The device performances of LEDs on SCAM are comparable to those of LEDs on sapphire. Our achievements indicate that highly efficient InGaN-based light emitters are possible on SCAM substrates.