I n s i t u growth of DyBa2Cu3O7−x thin films by molecular beam epitaxy

Films of DyBa2Cu3O7−x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 Å have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO3(100), SrTiO3(110), LaAlO3(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.