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Experimental synthesis demonstrates epitaxial growth of GdAuSb/LaAuSb superlattices, indicating a tunable platform for controlling magnetic and topological order.
We report the epitaxial stabilization of GdAuSb films and GdAuSb/LaAuSb superlattices via molecular beam epitaxy on (0001)-oriented Al₂O₃ substrates. GdAuSb crystallizes in the Au-Au dimerized YPtAs structure type (space group P6₃/mmc), the same structure as the Dirac semimetal LaAuSb. Angle-resolved photoemission spectroscopy (ARPES) measurements show similar near EF bandstructures for GdAuSb and LaAuSb, plus a rigid band shift for GdAuSb toward more holelike behavior and corelike Gd $4f$ states ~90.16em0exeV below the Fermi energy. LaAuSb/GdAuSb superlattices exhibit sharp superlattice fringes by x-ray diffraction and atomically precise interfaces by scanning transmission electron microscopy. Superlattices display two transitions in temperature-dependent resistvity, compared to a single N\'eel temperature for thick GdAuSb films. Superlattices of LnAuSb materials ($Ln=$ rare earth) with atomically abrupt interfaces offer an epitaxial platform for control of magnetic and topological order via tunable intralayer exchange and reduced dimensionality.
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Strohbeen et al. (2026) studied this question.
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