Numerical simulation of interconnect temperature regimes under thermal shock

Due to the constant reduction in the size of interconnects (based on Al, Cu, etc.) in microelectronic structures, the associated thermal load is constantly increasing. Therefore, it is important to study the heating dynamics of interconnect in pulsed modes. In this work, the temperature modes of operation of an Al-Si binary structure were simulated using the finite element method. The results of numerical modeling of thermal behavior of Al-Si structures were compared with experimental data obtained at various pulse energies (Wτ = 0.5–5.5 J) and duration up to 500 µs. Comparison showed that discrepancy between experimental results and numerical modeling results exceeded 10% over entire range of pulse energy.