Surface emitting linearly polarized InGaN/GaN light emitting diode (LED) is demonstrated using a subwavelength metallic nanograting. The aluminum based grating with a period of 150 nm is fabricated on top of the p-contact layer in a conventional InGaN LED structure grown on (0001) oriented sapphire substrate. Polarization ratio can reach 7:1, the highest ever reported polarization ratio directly from a light emitting diode. The polarization characteristics are studied in details both experimentally and theoretically, suggesting an effective way to make polarized light emission devices.
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Zhang et al. (2009) studied this question.
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