Computational modeling study demonstrates accurate film thickness prediction in atomic layer deposition using kinetic constants, indicating reduced reagent consumption and processing time.
The ALD method is promising for producing thin films used in microelectronics. Optimization of ALD process parameters allows for shorter film production times and reduced reagent consumption. A model for predicting film thickness depending on process parameters was developed. Software was developed to determine the model’s kinetic constants based on experimental data. The algorithm for finding the constants was tested using simulated experimental data. With a film thickness measurement error of ±2.6 nm, ten experimental points may be sufficient to find the optimal process parameters. The fundamental feasibility of using chemical-kinetic models with a large number of constants for practical application is demonstrated.
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Polomskikh et al. (2026) studied this question.
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