Multiphysics simulation demonstrates enhanced voltage blocking and reduced switching losses in diamond planar-gate MOSFETs, highlighting diamond as a superior material for high-frequency power.
Wide band gap (WBG) materials have emerged as promising candidates for high-frequency power electronics applications, including fast chargers for electric vehicles, RF generation, and high-power microwave applications. However, intrinsic material limitations of SiC constrain further improvements in the high voltage blocking capability and high-frequency switching performance. In this work, a Planar-Gate (PG) vertical diamond Power MOSFET is investigated for high voltage and high-frequency applications. A systematic investigation of static and dynamic characteristics of the proposed diamond PG-MOSFET is carried out and benchmarked against 1200 V vertical 4H-SiC-MOSFET with Planar-Gate (PG) and Split-Gate (SG) structures using COMSOL Multiphysics. All devices are designed with identical geometry and comparable doping concentration to enable material focused comparison. The static characteristics, switching characteristics and device capacitances are compared and analyzed. The Diamond-PG-MOSFET achieves forward blocking voltage of 2686 V, which is up to 97.07% higher than SiC-MOSFET, mainly due to higher critical electric field. Furthermore, the total switching losses of the diamond MOSFETs are reduced by up to 47.06% compared to SiC-MOSFET, owing to reduced reverse transfer capacitances ( C rss ) and lower specific on-state resistance ( R on . s p ).
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Shrimali et al. (2026) studied this question.
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