We report Raman scattering study on InN single crystalline films with wurtzite form. The films were grown on sapphire substrates by microwave-excited metalorganic vapor phase epitaxy and optical phonon properties of the films were investigated. Both A1(LO) and E2(2) peaks, which are related to a longitudinal optical phonon mode and a doubly degenerated mode, respectively, were observed at 596 cm−1 with the full width of 36 cm−1 at half maximum intensity and at 495 cm−1 with the full width of 20 cm−1 at half maximum intensity.
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Kwon et al. (1996) studied this question.