We report the synthesis of wurtzite-like gallium oxynitride (GaON) photocatalysts by nitridation of Ga(OH) 3 with NH 3 at temperatures between 550 and 900 °C. Ga(OH) 3 is a more suitable precursor for GaON synthesis than Ga 2 O 3, because its crystal lattice contains unoccupied 12-coordinate sites that facilitate ionic transportation during nitridation. The prepared GaON catalysts had band gap energies from 2.2 to 2.8 eV and showed significant activities in the visible-light promoted evolution of H 2 and O 2 gases from methanol and AgNO 3 solutions, respectively. The maximum H 2 and O 2 evolution rates occurred for catalysts synthesized at 625 and 700 °C, respectively. These active catalysts had an N/O atomic ratio close to unity, suggesting that extensive hybridization of N 2p and O 2p orbitals promotes charge mobility, and thus enhances photocatalytic activity. This study highlights the interesting possibility of synthesizing a large diversity of visible-light active, III-oxynitride catalysts using this Ga(OH) 3 route.
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Hu et al. (2010) studied this question.
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