Surface Illumination of Semiconductor Panels

General expressions are derived for the excess carrier densities in the bulk of finite or infinitely extended panels of semiconductor materials under light excitation. The illumination is in the form of nonpenetrating rectangular or circular light spots partially covering the surface of the panel. Theoretical calculations reveal an appreciable change in excess carrier distribution as the illuminated region approaches the boundary of the material. Experimental results verify this effect and favorably compare with the theoretical calculations.