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We investigated and compared the photoelectric behavior of the Pt sandwiched (Bi3.7Nd0.3)Ti3O12 (BNT) and Pb(Zr0.2Ti0.8)O3 (PZT) films deposited by sol-gel method. Based on the analysis of the photocurrent and I-V characteristics, the top and bottom Pt/film interface Schottky barriers are found to be more symmetric in BNT, compared to that in PZT. The photocurrents originated from the depolarization field due to the alignment of ferroelectric polarization are different, although the polarizations of the two films are about the same. The mechanism behind the origin of the different photocurrent behaviors between Pt/BNT/Pt and Pt/PZT/Pt capacitors was discussed.
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Cao et al. (2010) studied this question.
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