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In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance–voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal–semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.
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Chai et al. (1997) studied this question.
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