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A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O3/Nb-doped SrTiO3, especially, exhibits current–voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7–0.8 V, external conversion efficiency of 0.6%–0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained.
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Watanabe et al. (2001) studied this question.
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