Characteristics of Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3] on Metal and Al[sub 2]O[sub 3]/Si Substrates

We have fabricated on Pt and on 4 nm substrates. Although on Pt has a larger dielectric constant and grain size than those on the thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of ∼3.6 V. Moreover, the leakage current density of on at −10 V is nearly three orders of magnitude lower than that of on Pt. The comparable memory characteristics and the lower leakage current of on are important for continuous scaling down the ferroelectric memory.