Crack-free and dense PbTiO(3) films 1-2 mum thick were prepared by spinning a sol-gel derived solution onto an appropriate substrate, and firing and annealing the film at temperatures of 750-800 degrees C. The electrical properties of the films were studied as a function of temperature, frequency, and DC bias. Also, crack-free films of Pb(Sc(0.5)Ta(0.5))O(3) with an average grain size of 0.4 mum were prepared using a novel two-stage process. Films 4 mum thick had moderately high relative permittivities, low dissipation factors, and high resistivity.
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Patel et al. (1991) studied this question.
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