Dielectric Characteristics of Barium Strontium Titanate Based Metal Insulator Metal Capacitor for Dynamic Random Access Memory Cell

In this research work, the Metal-Insulator-Metal (MIM) capacitor structure is designed and fabricated with barium strontium titanate (BST) oxide material as the capacitor dielectric material and silver as both top and bottom electrodes for dynamic random access memory (DRAM) cell. This designed capacitor consists of about 2 mm BST pellet and about 1 mm silver top and bottom electrodes. The composition of the BST is chosen as Ba0.5Sr0.5TiO3 due to its better dielectric characteristics. The dielectric characteristics of both the fabricated MIM and the simulated MIM are compared and it is found that the experimental values and practical values are found to be comparable. The simulated dielectric constant, dielectric constant, charge storage density, leakage current density are found to be 1250, 0.025, 5 μC/cm2 and 5 pA/cm2, respectively against the corresponding experimental values of 1164, 0.063, 3.5 μC/cm2 and 49.4 pA/cm2.