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The paper presents a detailed study of the I-V characteristics of m-ferroelectric-m {Pt/Ba x St 1-x TiO 3 /Pt (Pt/BST/Pt)} thin film structure. The Schottky barrier thermal/field assisted and Pool-Frenkel (PF) emission along with the punch-through in the central region of the film are proposed for the interpretation of experimental I-V dependence. It is shown that both the Schottky barrier thermal/-field assisted emission and Pool-Frenkel emission from the oxygen vacancies conditioned traps may take place simultaneously. The effect of electric field on the electron (hole) emission from the trapping centers, in the symmetric Pt/BST/Pt thin film structure has been considered. The analysis of the PF effect indicates that the trapping centers are activated at very high electric fields, exceeding 10 5 V/cm. In Part 2 of the paper, based on the results and assumptions pointed in Part 1, analytical expressions were derived for Schottky barrier thermal/-field assisted and Pool-Frenkel emission currents. The computer modeling theoretical dependencies of the I-V characteristics has been compared with the experimental measured results and obtained good agreements.
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Buniatyan et al. (2020) studied this question.
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