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An amorphous metal-semiconductor-metal photodetector with ridged electrodes and an absorption layer of 600 nm of intrinsic hydrogenated amorphous silicon-germanium (i-a-SiGe:H) was fabricated on Corning 7059 glass. The ridged electrodes not only increase the volume of the absorption region but also cause a stronger lateral electric field in the absorption layer and hence effectively increase the responsivity of the device.
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Laih et al. (1999) studied this question.
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