Heteroepitaxial growth of InP on a GaAs substrate by low-pressure metalorganic vapor phase epitaxy

Good quality InP was successfully grown on (100)GaAs 2° off normal toward [011] substrates by introducing low-temperature grown GaAs/InP double buffer layers. It was found that addition of a thin GaAs buffer layer (20 nm thick) grown at low temperature (430 °C) between the GaAs substrate and an InP buffer layer was effective for improving the crystal quality. The full width at half-maximum of the x-ray rocking curve was as narrow as 200 arcsec for a 6-μm-thick InP layer. An electron mobility of 15 000 cm2/(V s) at 77 K was obtained for an unintentionally doped layer. The intensity of the photoluminescence at 77 K was as good as that for an InP substrate.