Optoelectronic dynamic random access memory cell utilizing a three-terminal N-channel self-aligned double-heterostructure optoelectronic switch

The double-heterostructure optoelectronic switch is demonstrated as a novel dynamic random access optoelectronic memory cell in an N-channel self-aligned three-terminal configuration. The cell employs a single polarity of bias and XY selectivity using the inversion channel contact and the optical input/output port. The switching powers, delays, and refresh capability offer the promise for large-scale integrated circuits.